Localized metal doping effect on switching behaviors of TaOx-based RRAM device

摘要

Memory unit, especially the non-volatile memory (NVM), is an indispensable component in a high performance electronic systems which aims at efficient information processing and storage. Resistive random access memory (RRAM) is one of the most promising candidates among the emerging memory technologies. However, optimization of the variability introduced by the intrinsic stochastic nature of filament formation remains a tough problem. In this paper, both operation voltage and resistance of the device with localized implantation show significant improvement of uniformity compared with uniformly doped device, which can be attributed to the further undermine of the randomness due to localized doping instead of uniformly doping.