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Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

机译:为低压可穿戴传感器应用而优化的超薄印刷有机TFT CMOS逻辑电路的制造

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Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21?cm(2) V(-1) sec(-1), and threshold voltages of nearly 0?V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75?Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.
机译:可以使用常规印刷技术制造的超薄电子电路是实现可穿戴健康传感器和下一代柔性电子设备所必需的关键要素。由于功耗低,使用两种类型的半导体的互补(CMOS)电路可轻松用于无线设备中。在这里,我们描述了超薄CMOS逻辑电路,不仅印刷了源/漏电极,而且印刷了半导体层。 p型和n型有机薄膜晶体管器件都在新开发的堆叠结构中的D触发器电路中使用,并表现出出色的电气特性,包括良好的载流子迁移率0.34和0.21?cm(2)V(- 1)sec(-1),低工作电压下的阈值电压接近0?V。这些印刷有机CMOS D触发器电路具有75?Hz的工作频率,并展示了其在柔性和印刷电子技术中的巨大潜力,特别是对于具有无线连接能力的可穿戴传感器应用。

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