A large signal non quasi static model of printed organic TFTs and simulation of CMOS circuits

摘要

A large signal non quasi static (LSNQS) compact model has been developed, implemented and applied to the simulation of organic thin film transistors (OTFTs) and test circuits realized with a printed organic CMOS process. The model is based on the current continuity equation discretized by using a spline collocation approach. The model is well suited for the simulation printed OTFTs since it assumes a charge-conductance model based on the variable range hopping (VRH) theory and takes in account the presence of parasitic regions related to the tolerance of the printing process.