Simulation Model for a Semiconductor Device Describing a quasi-Static density of a Carrier as a Non-quasi-static model

摘要

There is disclosed a simulation model and method for designing a semiconductor device being used for a simulation apparatus for designing a semiconductor device that includes using assuming units as to carrier transient density and current flow of electrodes along with a non-quasi-static model describing unit of the simulation apparatus. A simulation apparatus and computer readable medium with a simulation program for executing the method are also included.