High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

摘要

High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308?nm were achieved using high density (2.5 × 109?cm?2) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300?K, with a high internal quantum efficiency of 62% even at room temperature.