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High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

机译：用于深紫外LED的高密度GaN / AlN量子点，具有高量子效率和温度稳定性

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Chinese National Key Project "973" [2012CB619301, 2011CB925600]; "863" program [2014AA032308]; National Nature Science Foundation of China [61106008, 91321102, 11204254]

机译：国家重点项目973 [2012CB619301，2011CB925600]; “ 863”程序[2014AA032308]；国家自然科学基金[61106008，91321102，11204254]

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Yang Weihuang; Li Jinchai; Zhang Yong; Huang Po-Kai; Lu Tien-Chang; Kuo Hao-Chung; Li Shuping; Yang Xu; Chen Hangyang; Liu Dayi; Kang Junyong; 张勇; 李书平; 康俊勇;
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1. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability [J] . Weihuang Yang, Jinchai Li, Yong Zhang, Scientific reports. . 2014,第1期

机译：用于深紫外LED的高密度GaN / AlN量子点，具有高量子效率和温度稳定性
2. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure [J] . Jiadong Yu, Lai Wang, Di Yang, Applied physics express . 2015,第9期

机译：通过耦合的InGaN / GaN量子阱和量子点结构提高绿色InGaN量子点的内部量子效率
3. Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer [J] . Q. Wang, T. Wang, J. Bai, Journal of Applied Physics . 2008,第12期

机译：使用高温AlN缓冲剂在GaN表面上自组装InGaN量子点的生长和光学研究
4. Boost in deep-UV electroluminescence from tunnel-Injection GaN/AlN quantum dot LEDs by polarization-induced doping [C] . Jai K. Verma, Vladimir V. Protasenko, S. M. Islam, Gallium nitride materials and devices IX . 2014

机译：通过极化诱导掺杂增强隧道注入GaN / AlN量子点LED的深紫外电致发光
5. Validation of Vegard's Law for Lattice Matching InxAl 1-xN to GaN and the MOCVD Growth of AlxGa1-xN/AlN for Deep UV LEDs [D] . Foronda, Humberto Miguel. 2017

机译：晶格匹配InxAl 1-xN与GaN的Vegard定律的验证以及用于深紫外LED的AlxGa1-xN / AlN的MOCVD生长
6. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability [O] . Weihuang Yang, Jinchai Li, Yong Zhang, -1

机译：用于深紫外LED的高密度GaN / AlN量子点具有高量子效率和温度稳定性
7. High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures [O] . Islam, SM, Protasenko, Vladimir, Lee, Kevin, 2017

机译：超薄mBE GaN / alN在219 nm处的高效深紫外发射量子异质结构
8. Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices [R] . Petroff, P. M. 2003

机译：用于量子点器件室温操作的GaN / alN自组装量子点的研制

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

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