首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - $^{29}$Si NMR study of polycrystalline NaTiSi$_{2}$O$_{6}$
【24h】

APS -APS March Meeting 2017 - Event - $^{29}$Si NMR study of polycrystalline NaTiSi$_{2}$O$_{6}$

机译:APS -APS 2017年3月会议-活动-多晶NaTiSi的$ ^ {29} $ SiSi NMR研究$ _ {2} $ O $ _ {6} $

获取原文

摘要

NaTiSi$_{2}$O$_{6}$ (NTSO) structure consists of quasi 1-D zig-zag chains of edge-sharing slightly distorted TiO$_{6}$ octahedrons. The chains are separated by SiO$_{4}$ tetrahedrons. At high T the distance between magnetic spin-1/2 Ti$^{3+}$ ions in the chain is equal. At T$_c=$210 K the compound undergoes orbital-Peierls transition. As a result, below 210 K TiO$_{6}$ chain becomes dimerized having diamagnetic singlet ground state. Neutron spectroscopy provided singlet-triplet gap value 615(35) K [*], $mu$SR 2$Delta=$700(100) K. Our $^{29}$Si magic angle spinning NMR spectra show in paramagnetic region one single resonance with paramagnetic shift $K=$713 ppm at 300 K. The shift slightly increases with decreasing T and has maximum $K=$796 ppm at T= 213 K. Below T$_c$ the resonance transforms into two lines with different paramagnetic shifts. At T = 56 K the spectrum shows 2 sharp lines with diamagnetic chemical shifts -84 and -101 ppm corresponding to 2 different Si sites in the low-T unit cell. T-dependence of $^{29}$Si spin-lattice relaxation $T_{1}$ in 70 K $<$ T $<$ 140 K follows activation type T-behavior with $E_{a}$=300(20) K, which we ascribe to the splitting between the 2 lowest $d$-orbital energy levels. $^{*}$ H. J. Silverstein et al., PRB 90, 140402(R) (2014).
机译:NaTiSi $ _ {{2} $ O $ _ {6} $(NTSO)结构由边缘共享的准1-D之字形链组成,其TiO $ _ {6} $八面体略微扭曲。链由SiO __ {4} $四面体隔开。在高T下,链中磁性自旋1/2 Ti $ ^ {3 +} $离子之间的距离相等。在T $ _c = $ 210 K时,化合物经历轨道-Peierls跃迁。结果,低于210 K的TiO $ _ {6} $链成为具有反磁性单线态基态的二聚体。中子能谱提供单重态-三重态间隙值615(35)K [*],$ mu $ SR 2 $ Delta = $ 700(100)K。我们的$ ^ {29} $ Si幻角旋转NMR谱在顺磁区域显示一个在300 K时具有顺磁性位移$ K = $ 713 ppm的共振。该位移随T的减小而略有增加,并且在T = 213 K时具有最大值$ K = $ 796 ppm。在T $ _c $以下,共振转变为两条具有不同顺磁性位移的线。在T = 56 K时,光谱显示2条清晰的线,具有抗磁性化学位移-84和-101 ppm,对应于低T晶胞中的2个不同的Si位置。 $ ^ {29} $ Si自旋晶格弛豫$ T_ {1} $在70 K中的T相关性$ <$ T $ <$ 140 K遵循具有$ E_ {a} $ = 300(20的激活类型T行为),我们将其归因于2个最低的d $-轨道能量级之间的分裂。 $ ^ {*} $ HJ Silverstein等人,PRB 90,140402(R)(2014)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号