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Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

机译:通过化学气相沉积控制合成原子层状六方氮化硼

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Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.
机译:六方亚硝酸硼(h-BN)是许多应用中有吸引力的材料,包括电子产品,可作为石墨烯的补充,抗氧化涂层,发光体等。然而,高质量的h-BN的合成仍然是巨大的挑战。在这项工作中,通过受控的化学气相沉积,我们证明了具有可控制的厚度直至原子层的h-BN薄膜的合成。 h-BN的生长质量已通过互补特性得到了证实,这些特性包括高分辨率过渡电子显微镜,原子力显微镜,拉曼光谱和X射线光电子能谱。这项工作将为大规模和高质量h-BN的生产及其应用铺平道路。

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