Preparation method of single layer hexagonal boron nitride using low-pressure chemical vapor deposition method

摘要

the invention is the low pressure chemical vapor deposition method (LPCVD method) using a single layer of hexagonal boron nitride (Hexagonal boron nitride; h-BN) the manufacturing method of the, present invention relates to a method for the recovery of the substrate from the h-BN, and more particularly, high performance that can cover a large area on the substrate by using the LPCVD method h-BN can be synthesized in a single layer, the h-BN layer formed on a substrate by an electrochemical method can be moved to the bubbling any other substrate can be used in recycling of the substrate. H-BN of the high-performance single layer can be used as a useful material to develop a shorter ultraviolet (deep UV) optoelectronic devices than ultraviolet rays. ;