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Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

机译:电场控制氧化物双层薄膜中的异常和拓扑霍尔效应

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One of the key goals in spintronics is to tame the spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are the anomalous and topological Hall effects. However, controlling them with electric fields has remained unachieved since an electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric fields in oxide heterostructures consisting of ferromagnetic SrRuO3 and nonmagnetic SrIrO3. We observe a clear electric field effect only when SrIrO3 is inserted between SrRuO3 and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO3 is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena.
机译:自旋电子学的关键目标之一是控制连接电子自旋和运动的自旋-轨道耦合(SOC),从而在巡回磁体中产生令人着迷的磁传输特性。这种基于SOC的现象的突出示例是异常和拓扑霍尔效应。然而,由于电场倾向于在巡回磁体中被屏蔽,因此仍然没有实现通过电场来控制它们。在这里,我们证明了异常和拓扑霍尔效应都可以通过由铁磁性SrRuO3和非磁性SrIrO3组成的氧化物异质结构中的电场来调节。仅当将SrIrO3插入SrRuO3和栅极电介质之间时,我们才能观察到清晰的电场效应。我们的结果表明,对这些霍尔效应和其他可能与SOC有关的现象进行电调谐时,非磁性材料(如SrIrO3)的强SOC至关重要。

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