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Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies

机译:在太赫兹频率下对二氧化钒薄膜中的纳米级相分离进行成像

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Vanadium dioxide (VO2) is a material that undergoes an insulator–metal transition upon heating above 340?K. It remains debated as to whether this electronic transition is driven by a corresponding structural transition or by strong electron–electron correlations. Here, we use apertureless scattering near-field optical microscopy to compare nanoscale images of the transition in VO2 thin films acquired at both mid-infrared and terahertz frequencies, using a home-built terahertz near-field microscope. We observe a much more gradual transition when THz frequencies are utilized as a probe, in contrast to the assumptions of a classical first-order phase transition. We discuss these results in light of dynamical mean-field theory calculations of the dimer Hubbard model recently applied to VO2, which account for a continuous temperature dependence of the optical response of the VO2 in the insulating state.
机译:二氧化钒(VO2)是一种在加热到340?K以上时会经历绝缘体-金属转变的材料。关于这种电子跃迁是由相应的结构跃迁还是由强电子-电子相关性驱动,仍存在争议。在这里,我们使用自制的太赫兹近场显微镜,使用无孔散射近场光学显微镜来比较在中红外和太赫兹频率下获得的VO2薄膜中跃迁的纳米级图像。与传统的一阶相变的假设相反,当使用太赫兹频率作为探针时,我们观察到了更为渐进的过渡。我们根据最近应用于VO2的二聚体Hubbard模型的动态平均场理论计算来讨论这些结果,这说明了绝缘状态下VO2的光学响应具有连续的温度依赖性。

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