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A two-dimensional Fe-doped SnS 2 magnetic semiconductor

机译:二维铁掺杂SnS 2磁性半导体

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Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ~2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2?K and a Curie temperature of ~31?K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.
机译:磁性二维材料因其在自旋电子学中的巨大潜在应用而备受关注。在这项研究中,我们提出了使用微机械裂解法剥离高质量的掺Fe的SnS2单层。 Fe原子掺杂在Sn原子处,Fe含量分别为〜2.1%,1.5%和1.1%。基于Fe0.021Sn0.979S2单层的场效应晶体管表现出n型行为并表现出高光电性能。磁性测量表明,纯SnS2是抗磁性的,而Fe0.021Sn0.979S2表现出铁磁行为,在2?K和居里温度约31?K时具有垂直各向异性。密度泛函理论计算表明,掺Fe的SnS2单层中的远距离铁磁有序在能量上是稳定的,并且估计的居里温度与我们的实验结果非常吻合。结果表明,掺铁的SnS2在未来的纳米电子,磁性和光电应用中具有巨大的潜力。

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