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Influence of metal contacts on the electrical properties of a UV-MSM photodetector

机译:金属触点对UV-MSM光电探测器电性能的影响

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We have developed a two-dimensional theoretical model. This model allowed us to characterize the MSM photodetector based ZnO. It also allowed us to simulate the dark current and photocurrent of the device with different dimensions of the metal contact of structure. The simulation results were agreed with those of the experiment. We have identified the influence of geometry parameters of the metal contact on the dark current and also on the photocurrent. Calculating the ratio (photocurrent / dark current), allowed us to find the best values of finger width w and finger spacing s of the metal structure leading to a low dark current and at the same time a better absorption of the incident light. The best performance of MSM PD are obtained for the following values s = 14 μm, w = 12 microns. These values have enabled us to obtain a dark current of 25nA and a photocurrent equal to 0.78 μA at a 3V bias.
机译:我们已经开发了一个二维理论模型。该模型使我们能够表征基于MSM光电探测器的ZnO。它也使我们能够模拟具有不同尺寸的结构金属触点的器件的暗电流和光电流。仿真结果与实验结果一致。我们已经确定了金属触点的几何参数对暗电流以及光电流的影响。计算比率(光电流/暗电流),使我们能够找到金属结构的手指宽度w和手指间距s的最佳值,从而导致较低的暗电流并同时更好地吸收入射光。对于以下值s =14μm,w = 12微米,可以获得MSM PD的最佳性能。这些值使我们能够在3V偏置下获得25nA的暗电流和等于0.78μA的光电流。

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