Comparative Methods Of Measurement Of Contact Resistivity Of Metal-Semiconductor Contact

摘要

In this paper, comparison of mathematical models to determine contact resistivity of Metal-Semiconductor (M-S) contacts is made. Contact resistivity of M-S contact is obtained using a mathematical model based on the values of ideality factor and barrier height which are obtained from Current–voltage (I-V) characteristics of M-S contact. Contact resistivity of M-S contact is obtained using another mathematical model based on two tuning-parameters. Contact resistivity of M-S contact is also obtained using Shockley’s standard Transmission Line Model (TLM) technique. Thin films of Cd1-xZnxTe of 1μm thickness for ‘x’ varying from 0.0567 to 0.2210 are the semiconductor materials fabricated on Nickel coated glass substrates and large work function Nickel is the contact points on these films. I-V characteristic data are recorded from these Ni-Cd1-xZnxTe stuctures. The values of contact resistivity of the M-S contacts obtained from these three methods are compared and the results are found to match well.