首页>
外国专利>
SPECIFIC CONTACT RESISTIVITY MEASUREMENT METHOD, SEMICONDUCTOR DEVICE FOR SPECIFIC CONTACT RESISTIVITY MEASUREMENT, AND METHOD FOR MANUFACTURING THE SAME
SPECIFIC CONTACT RESISTIVITY MEASUREMENT METHOD, SEMICONDUCTOR DEVICE FOR SPECIFIC CONTACT RESISTIVITY MEASUREMENT, AND METHOD FOR MANUFACTURING THE SAME
展开▼
机译:特定的接触电阻率测量方法,用于特定的接触电阻率测量的半导体装置及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A test structure, a method of employing the test structure, and a method of manufacturing the test structure are provided for measuring a contact resistance between a silicide and a semiconductor. The test structure includes a set of silicide layers separated from one another and upon which electrodes from a set of electrodes are placed. One pair of electrodes is employed to force a constant current through the silicide layers and a diffusion layer of a semiconductor substrate of the test structure. Another pair of electrodes determines a potential drop between the silicide layers and the diffusion layer. Based upon the constant current and the potential drop determined, a contact resistance is extracted.
展开▼