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外文期刊>Journal of Materiomics
>Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory
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Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory
Ferroelectric materials are long believed to be useful in information technology. As early as 1952, the concept of ferroelectricrandom-access memory (FeRAM) had already been proposed byMr. Dudley Allen Buck, who was by then only a graduate student[1]. However, after more than sixty years, the application of FeRAMis still limited. One major obstacle hindering the development ofFeRAM is the readout of ferroelectric polarization, which is generally destructive, i.e. it requires a write-after-read architecture, justlike standard dynamic random-access memory (DRAM) capacitorcells.
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机译：长期以来，铁电材料一直被认为可用于信息技术。早在1952年，铁电随机存取存储器（FeRAM）的概念已经由Mr. Dudley Allen Buck，当时只有研究生[1]。但是，经过六十多年，FeRAM的应用仍然受到限制。阻碍FeRAM发展的一个主要障碍是铁电极化的读出，这通常是破坏性的，即，它需要先写后读架构，就像标准动态随机存取存储器（DRAM）电容器一样。
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