THE OSCILLATORY GALVANOMAGNETIC EFFECT IN THIN METAL LAYERS UNDER THE PRESENCE OF THE LAYER OF DIFFUSING IMPURITIES

摘要

We analyzed theoretically the annealing-time dependence of the electrical resistivity, $sigma left( {t_{m D}} ight)$, of a thin metal layer capped with the ultrathin layer of diffusing impurities in a transverse magnetic field. We have obtained both general formulas and asymptotic expressions for $sigma left( {t_{m D}} ight)$. We have calculated numerically the dependence of the $sigma$ on the annealing time at arbitrary parameters that characterize the sample structure. We demonstrated that changes of the conductivity of the metal layer caused by the diffusion annealing provide us with the possibility to investigate the processes of bulk diffusion and estimate bulk diffusion coefficients.