Photoluminescence from 20 MeV electron beam irradiated homogeneous SiOx and composite Si-SiOx films

摘要

Theeffectof20MeVelectronirradiationontheroomtemperaturephotoluminescencefromhomogeneousSiOxandcompositeSi-SiOxfilms,containingamorphousorcrystallineSinanoparticles,isstudied.Layerswithx=1.5and1.7andthicknessof200nmweredepositedoncrystallinesiliconsubstratesbythermalevaporationofSiOinvacuum.Filmannealinginaninertatmosphereat700oCor1000oCfor60minwasappliedtogrowamorphousorcrystallinesiliconnanoparticles,respectively,inaSiOxmatrix.Samplesfromalltypesoffilmswereirradiatedwith20MeVelectronsatclosetoroomtemperatureandafluenceof2.4x1014el.cm-2.Photoluminescencewasmeasuredunderexcitationwiththe488nmlineofanAr+laser.Theelectronirradiationcausesadecreaseoftheintegratedphotoluminescenceintensityincompositesampleswithinitialx=1.7containingamorphousorcrystallinenanoparticlesandx=1.5sampleswithSinanocrystals.Theelectronirradiationofx=1.5sampleswithamorphousnanoparticlesslightlyincreasesthephotoluminescenceintensity.TheobtainedresultsarediscussedintermsofelectronbeaminducedphaseseparationandSinanoparticlesizeincrease...