Metal Based Materials for EUV Lithography

摘要

Considering the scenario that polymer-based resists will possibly be struggling to satisfy all performance criteria for high volume manufacturing imposed by high power sources and high-NA imaging, it seemed necessary to introduce new materials for EUV lithography. To that end, nanometer scale metal clusters, originally designed to be building units of a metal-organic framework, were introduced and tested as metal-based resists. In the work herein, we wish to report all the progress that has been achieved in the patterning performance, focusing mainly on 32 nm and 44 nm pitch 1:1 lines and space pattern.