High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

摘要

A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF). The deposited films by spin-coating were annealed at moderate process temperature (≤500°C). The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities () decreased and shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing . As a result, the optimized performance of IGZO TFT with the mobility of 3.4?cm2V?1s?1 showed the MOD process was a promising approach.