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首页> 外文期刊>Journal of Modern Physics >MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo
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MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

机译:通过单一固体源前驱体Bis-(Morpholinodithioato-s,s’-Mo)硫化钼薄膜的MOCVD

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A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10P–5P ΩP–1P?cmP–1P. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 μm while XRD indicates parallel orientation of the basal plane to the substrate surface.
机译:制备了单一的固体源前体双(吗啉代二硫代-s,s′)-Mo,并使用金属有机化学气相沉积(MOCVD)技术在420℃的沉积温度下将硫化钼薄膜沉积在钠钙玻璃上。使用卢瑟福背散射光谱(RBS),紫外-可见光谱,四点探针技术,扫描电子显微镜(SEM),X射线衍射(XRD)和原子力显微镜(AFM)对薄膜进行了表征。从吸收光谱分析获得1.77eV的直接光学带隙。发现薄层电阻约为10P-5PΩP-1PΩcmP-1P。薄膜的SEM显微照片显示薄膜的层状结构,其估计晶粒尺寸小于2μm,而XRD则表示基面平行于基材表面。

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