PLASMA-ENHANCED CVD OF HARD SICN THIN FILMS USING BIS-(TRIMETHYLSILYL)CARBODIIMIDE OR HEXAMETHYL-DISILAZANE AS SINGLE SOURCE PRECURSORS

摘要

Amorphous hydrogenated SiCN thin films were deposited by plasma-enhanced CVD at intermediate substrate temperatures (50-300℃) using the novel precursor bis(trimethylsilyl)carbodiimide (BTSC) and compared to hexamethyldisilazane (HMDS) as the model compound. These liquid single source organosilicon precursors can be used as less hazardous alternatives to the commonly applied mixture of silane with hydrocarbons, ammonia, or nitrogen. The films were deposited onto metallic substrates in order to investigate their potential for wear and corrosion protection. Their chemical composition, hardness and adhesion in dependence on substrate temperature was studied.