Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

摘要

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR¹R²)_x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C₁-C₈ alkyl, C₁-C₈ perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula H_xSi(NR¹R²)_4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C₁-C₈ alkyl, and C₁-C₈ perfluoroalkyl. By comparison with the standard SiO₂ gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.