Electrical Properties of CuO-Doped PZT-PZN-PMnN Piezoelectric Ceramics Sintered at Low Temperature

摘要

The 0.8Pb(Zr0.48Ti0.52)O3-0.125Pb(Zn1/3Nb2/3)O3-0.075Pb(Mn1/3Nb2/3)O3 (PZT-PZN-PMnN) + x wt% CuO piezoelectric ceramics, where x = 0.0, 0.05, 0.075, 0.10, 0.125, 0.150, and 0.175, have been fabricated by the conventional solid-state reaction method and the B-site Oxide mixing technique (BO). The effect of CuO on the sinterability, structure, and electrical properties of PZT-PZN-PMnN ceramics was systematically studied. The CuO addition significantly reduced the sintering temperature of the ceramics from 1150°C to 850°C. Experimental results showed that with the doping of CuO, all the ceramics could be well sintered and exhibit a dense, pure perovskite structure. The specimen containing 0.125 wt% CuO sintered at 850°C showed the good electrical properties: the density of 7.91 g/cm3; the electromechanical coupling factor, kp = 0.55 and kt = 0.46; the dielectric constant, ε = 1179; the dielectric loss (tand) of 0.006; the mechanical quality factor (Qm) of 1174; the piezoelectric constant (d31) of 112 pC/N.