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Organic thin-film transistors with over 10?cm2/Vs mobility through low-temperature solution coating

机译:通过低温溶液涂覆具有超过10?cm2 / Vs迁移率的有机薄膜晶体管

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ABSTRACTRecent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current–voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current–voltage characteristics, featuring high (over 10?cm~(2)/Vs) field-effect mobility.
机译:摘要最近对有机薄膜晶体管(OTFT)的研究报告了较高的迁移率值,但其中许多显示出不理想的电流-电压特性,可能会导致高估迁移率值。在这项研究中,通过考虑电荷注入的影响简要地研究了非理想晶体管的行为,并提出了一种克服这种影响的方法。相应地,开发了各种电荷注入层,并研究了它们对金属触点改性的影响,包括功函数调整和界面掺杂。通过对选定液体进行润湿和去润湿的精细操作,已涂覆的材料形成了良好的金属-半导体界面。使用这种电极,OTFT在室温下制造,并且在电流-电压特性方面表现出近乎理想的晶体管性能,具有高(超过10?cm〜(2)/ Vs)的场效应迁移率。

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