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3 - 10 GHz Ultra-Wideband Low-Noise Amplifier Using Inductive-Series Peaking Technique with Cascode Common-Source Circuit

机译:采用电感串联峰值技术和级联共源电路的3-10 GHz超宽带低噪声放大器

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The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
机译:本文的目的是通过利用与感应串联峰值技术相关的两级级联电路原理图来研究超宽带(UWB)低噪声放大器(LNA),它可以改善3-10 GHz微波中的带宽单片集成电路(MMIC)。拟议的UWB LNA放大器采用共面波导(CPW)布局和0.15μmGaAs D模式pHEMT技术实现。基于这些技术,此提议的UWB LNA的芯片尺寸为1.5 mm x 1.4 mm,获得了3 dB的平坦度增益,4-8 GHz带宽,4 dB的恒定增益,低于5 dB的噪声系数以及回波损耗优于–8.5 dB。根据我们的实验结果,使用电感串联峰值技术的低噪声放大器可以在3-10 GHz内获得更宽的带宽,更低的功耗和更高的增益平坦度。最后,整个LNA表征具有超宽带宽和低噪声特性,这说明所提出的UWB LNA具有紧凑的尺寸和良好的RF特性。该UWB LNA电路具有较高的RF特性,可为低噪声微波电路应用提供条件。

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