3ߝ10 GHz ultra-wideband low-noise amplifier with new matching technique

摘要

A low-power and low-noise amplifier with a new input- matching technique using 0.18 mm CMOS technology for ultra-wideband applications is presented. A proposed broadband input match can be acquired easily by selecting an appropriate width of the transistor, which will effectively avoid the usage of the low-Q on-chip inductors in the input network. Moreover, demonstrated is the feasibility of the inter-stage resonator to accomplish bandwidth enhancement without additional power consumption. The IC prototype achieves good performances such as a power gain of 16.2 dB, a better than 10 dB input return loss, and 2.3 dB minimum noise figure while consuming a DC core power of only 6.8 mW.