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Characterization of Ni2P(10-10): Soft X-Ray Photoelectron Spectroscopy Study

机译:Ni2P(10-10)的表征:软X射线光电子能谱研究

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The composition and electronic structure of a Ni2P(10-10) surface have been investigated with Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and photoelectron spectroscopy (PES) utilizing synchrotron radiation. As the Ni2P(10-10) surface was sputtered by Ar+ ion (1 keV, 15 min), the concentration of P atoms in the surface region was reduced. As the surface was annealed at elevated temperatures, the concentration of P atoms was increased due to the segregation from the bulk. The segregation was found to proceed rapidly at 260-330°C. The surface before segregation of P atoms gave a diffused (1× 1) LEED pattern, while the pattern changed to a c(2× 4) pattern when the P atoms were segregated on the surface. The change in the surface electronic structure induced by the segregation of P atoms was investigated by PES. It was found that the spectral intensity of the valence band in the region of 0-2 eV was decreased when the P atoms were segregated to the surface, indicating that the 3d levels of surface Ni atoms were stabilized through the formation of bonds with the 3p levels of the segregated P atoms. [DOI: 10.1380/ejssnt.2012.45]
机译:Ni2P(10-10)表面的组成和电子结构已通过俄歇电子能谱(AES),低能电子衍射(LEED)和利用同步辐射的光电子能谱(PES)进行了研究。当用Ar +离子(1 keV,15分钟)溅射Ni2P(10-10)表面时,表面区域中P原子的浓度降低。随着表面在高温下退火,P原子的浓度由于与主体的分离而增加。发现分离在260-330℃快速进行。 P原子偏析前的表面呈现出扩散的(1×1)LEED图案,而当P原子偏析于表面时,该图案变为c(2×4)图案。通过PES研究了由P原子的偏析引起的表面电子结构的变化。发现当P原子偏析到表面时,价带的光谱强度在0-2 eV范围内降低,表明表面Ni原子的3d能级通过与3p的键形成而得以稳定。原子的水平[DOI:10.1380 / ejssnt.2012.45]

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