Calculation of the electrical parameters of aluminium/p type silicon diodes with and without the interfacial insulator layer using thermionic emission theory

摘要

TheeffectsofinterfacialinsulatorlayerontheelectricalcharacteristicsofAl/p-Sidiodeshavebeeninvestigatedusingthecurrent-voltage(I-V)characteristicsatroomtemperature.Thevaluesofidealityfactor(n),barrierheight(Phi;b)andseriesresistanceRshavebeendeterminedfromln(I)-Vplots,CheungfunctionsandthemodifiedNordefunctions.ElectricalpropertiesobtainedfromI-VcharacteristicsofthedevicewithinterfacialinsulatorlayerhavebeencomparedwiththeonesobtainedfromI-Vcharacteristicsofthedevicewithoutinterfacialinsulatorlayer.Thecalculatedidealityfactorandbarrierheightare1.49and0.595eVforAl/p-Sidiode,and1.94and0.517eVforAl/SiO2/p-Sidiode,respectively,anditisobservedthattheidealityfactor(n)increasesandbarrierheight(Phi;b)decreaseswithinterfacialinsulatorlayer.TheseriesresistancevaluesobtainedfromCheungfunctionsofthediodewithandwithouttheinterfacialinsulatorlayerareRs=71nbsp;andRs=112,respectively.Current-voltagecharacteristicsandthepower-lawdependencewasdeterminedtobegovernedbyspacecharge-limitedcurrents(SCLC).