S-band 600 W and X-band 200 W High-Power GaN HEMTs for Radar Transmitters

摘要

High output power gallium nitride (GaN) high electron mobility transistors (HEMTs) have been developed for S-band and X-band radar applications. The fully internally matched S-band GaN HEMT exhibits a minimum output power of 600 W, a minimum power gain of 12.8 dB, and a drain efficiency (DE) of 60% at 2.7–2.9 GHz for radar applications such as an air trafficcontrol radar. The fully internally matched X-band GaN HEMT exhibits a minimum output power of 200 W, a minimum power gain of 9 dB, and a power-added efficiency (PAE) of 38% at 8.5–9.8 GHz for radar applications such as a marine radar and weather radar. The output power of these GaN HEMTs is the highest in the market, contributing to reduction in the size, weight and power consumption of radar transmitters.