Mobility of Surface State Electrons on Liquid Helium Films in Micro- Structured Geometry

摘要

The present paper discusses the studies of surface state electrons (SSE) on liquid helium films in confined geometry using suitable substrate structures, microfabricated on a silicon wafer which resembles Field Effect Transistors (so called Helium FET). The sample has a Source and Drain regions, separated by a Gate structure, which consists of 2 gold electrodes with a narrow gap (channel) through which the electron transport takes place. After developing a new model of number of saved electrons as a function of gate barrier, it becomes easier to study the mobility of SSE. The experimental results show a reasonable agreement with the literature.