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OPTICAL AND PHOTOLUMINESCENT STUDIES ON VO DOPED SnO2 THIN FILMS

机译:VO掺杂SnO2薄膜的光学和光致发光研究。

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VO2+ doped SnO2 thin films have been prepared on ultra-clean glass substrates by chemical spray pyrolysis technique. UV-vis, PL, Electrical conductivity and chromaticity studies were investigated on VO2+ doped SnO2 thin films. Optical absorption spectrum showed three bands at 753, 720 and 610 nm in the wavelength range 300-800 nm. DC electrical conductivity studies revealed that large value of thermoelectric power of VO2+ doped SnO2thin films possess semiconductor behaviour. The thermo emf of VO2+ doped SnO2thin films was studied in the temperature range 275 - 325 K using thermal probe method. Photoluminescence spectrum showed that the optical bands lie at 352 and 436 nm. The CIE (x, y)chromaticity is calculated from the emission spectrum and the coordinates were found for VO2+ doped SnO2 thin films at (x = 0.2993, y = 0.4912) showed in blue and yellow regions.
机译:通过化学喷雾热解技术,在超净玻璃基板上制备了掺杂VO2 +的SnO2薄膜。在掺杂VO2 +的SnO2薄膜上研究了UV-vis,PL,电导率和色度的研究。光吸收光谱在波长范围300-800 nm处在753、720和610 nm处显示三个波段。直流电导率研究表明,VO2 +掺杂SnO2薄膜的热电功率值大,具有半导体特性。采用热探针法研究了VO2 +掺杂的SnO2薄膜的热电动势。光致发光光谱表明,光学带位于352和436nm。从发射光谱计算出CIE(x,y)色度,并在蓝色和黄色区域显示了在(x = 0.2993,y = 0.4912)处VO2 +掺杂的SnO2薄膜的坐标。

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