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Effects of Cu doping on the structure, electronic and optical properties of SnO2 thin films by spray pyrolysis: An experimental and density functional study

机译:Cu掺杂对SnO2薄膜通过喷雾热解的结构,电子和光学性质:实验性和密度函数研究

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摘要

Cu doped SnO2 thin films have been prepared by spray pyrolysis methods. The optical band gap increases with the concentration of Cu dopants while the crystallite size of SnO2 decreases with the Cu doping concentration. X-ray diffraction analysis shows that Cu doped SnO2 thin films display the preferred growth along (110) plane at a high Cu concentration. X-ray photoelectron spectroscopy shows that Cu2+ is observed in the SnO2 thin films at a low Cu doped concentration and transforms into Cu+ at a high Cu concentration and that oxygen vacancies decrease with the Cu doping concentration. Density functional theory calculation reveals that the crystal lattice constant of Cu doped SnO2 is smaller than the principle SnO2 leading to the increase in the band gap. Our results give a significant basic theory on the Cu doped SnO2 thin films which will be promising materials for optoelectronic devices due to the remarkable photoelectrical properties. (C) 2017 Elsevier B.V. All rights reserved.
机译:Cu掺杂的SnO2薄膜通过喷雾热解方法制备。 光带间隙随着Cu掺杂剂的浓度而增加,而SnO2的微晶尺寸随Cu掺杂浓度而降低。 X射线衍射分析表明,Cu掺杂的SnO2薄膜以高Cu浓度显示沿(110)平面的优选生长。 X射线光电子体光谱表明,在低Cu掺杂浓度下在SnO 2薄膜中观察到Cu2 +,并以高Cu浓度转化为Cu +,并且氧空位随着Cu掺杂浓度降低。 密度函数理论计算显示Cu掺杂SnO2的晶格常数小于导致带隙增加的原理SnO2。 我们的结果在Cu掺杂的SnO2薄膜上提供了显着的基本理论,这是由于光电性能显着的光电器件的有希望的材料。 (c)2017年Elsevier B.V.保留所有权利。

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