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Studies of electricaland optical properties of sn doped and undoped ZnO thin films by the spray pyrolysis method

机译:喷雾热解法研究Sn掺杂和非掺杂ZnO薄膜的电学和光学性质

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摘要

Undoped and tin (So) doped zinc oxide (ZnO) !hin film have been deposited by spray pyrolysis me1hod of zinc acetate and tin ch1oride. The concentrationratio of[Sn]/ [Zn] was varied from 0-5 at %. The effect of doping Sn on physical and optica1 properties was studied by diffcrent techniques such as X-ray di:ffraction for structura 1 characterization, SEM forthickness and morpbology, UV-Vis spectroscopy for optical properties, Hall effect and photoconductivity for electrical characterization. X-ray di:ffraction (XRD) patterns show Iba. Iba fllms deposited are polycrystalline with (002) plane as Iba preferential orientatioo. According 10 Scherrer's equation, grain size values on the fi1ms are found between 30 - 45 nm with spberica1 shape. Optical transmittance was about 92% in visible range for the optimum film ami shows that the band gap decreases from 3.29 to 3 .17 e V.
机译:通过乙酸锌和氯化锡的喷雾热解方法已经沉积了未掺杂和锡(So)掺杂的氧化锌(ZnO)薄膜。 [Sn] / [Zn]的浓度比在0-5at%之间变化。通过衍射技术研究了掺杂锡对物理和光学性能的影响,例如用于结构1表征的X射线衍射:SEM异常和蠕变学,用于光学性能的UV-Vis光谱,用于电学表征的霍尔效应和光电导率。 X射线衍射图(XRD)显示Iba。沉积的Iba薄膜是多晶的,具有(002)平面作为Iba优先取向。根据10 Scherrer方程,发现薄膜的晶粒尺寸值为spberica1,在30-45 nm之间。对于最佳膜ami,在可见光范围内的透光率约为92%,表明带隙从3.29降至3.17 eV。

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