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Effect of Mg doping on optical and electrical properties of SnO2 thin films: An experiment and first-principles study

机译:MG掺杂对SnO2薄膜光学和电性能的影响:实验与第一原理研究

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摘要

Transparent Mg-doped p-type conductive SnO2 thin films were fabricated on quartz substrates by sol gel method. Effect of Mg doping on structural, morphological, optical, and electrical properties of SnO2 films were investigated. A single phase of tetragonal rutile structure was observed in Mg-doped SnO2 films. The optical bandgap energy of the Mg-doped SnO2 films showed a systematical redshift with respect to the undoped SnO2 film, and the resistivity significantly increased with the increase of Mg concentration. A conduction type transform from n to p was also observed. The strong ultraviolet and comparatively weak blue/green emissions were observed in room temperature photoluminescence, suggesting the dipole-forbidden rule of bulk SnO2 is broken in Mg-doped SnO2 films. These results were supported by first-principles electronic structure calculations. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:通过溶胶凝胶法在石英基板上制造透明Mg掺杂的p型导电SnO2薄膜。 研究了MG掺杂对SnO2膜的结构,形态学,光学和电性能的影响。 在Mg掺杂的SnO2膜中观察到单相粗鲁结构的单相。 Mg掺杂的SnO2膜的光学带隙能量显示出相对于未掺杂的SnO2膜的系统红移,并且随着Mg浓度的增加,电阻率显着增加。 还观察到N到P的导通型变换。 在室温光致发光中观察到强紫外线和相对弱的蓝/绿色排放,表明散孔SnO2的偶极禁止规则被破坏在Mg掺杂的SnO2薄膜中。 这些结果是通过第一原理电子结构计算的支持。 (c)2015 Elsevier Ltd和Techna Group S.R.L. 版权所有。

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