Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations

摘要

We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain inIn0.38Ga0.62As1_yNy/GaAsquantum well structures was determined and analyzed. A 10-bandk_pHamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.