Monte Carlo Simulation of GaN Submicron n+-n-n+ Diode with AlGaN Heterojunction Cathode

摘要

An ensemble Monte Carlo simulation has been developed to simulate the motion of electrons in a submicron GaN diode with a AlxGa1-xN heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers. The analysis has also shown that the mean drift velocity for electrons in the channel is about 2x105 m sec-1 at bias 4 V. Mean drift velocity in channel decrease with temperature and reach to saturated value about 1.5x105 m sec-1.