...
首页> 外文期刊>Letters on Materials >Structure and electronic properties of graphyne layers modeled on layers of graphene L3-12
【24h】

Structure and electronic properties of graphyne layers modeled on layers of graphene L3-12

机译:基于石墨烯L3-12层的石墨烯层的结构和电子性能

获取原文
   

获取外文期刊封面封底 >>

       

摘要

In the present paper, a theoretical study of the structure and electronic properties of new polymorphic conformations ofgraphyne layers modeled on layers of graphene L3–12 was performed. Graphyne layers have been constructed by replacingcarbon-carbon bonds between three-coordinated (sp2-hybridized) atoms in the graphene layer of L3–12 with diatomic carbynechains. Geometric optimization and examination of electronic properties of novel graphyne architectures were performedwithin the framework of density functional theory using the gradient approximation. Calculations have shown the possibilityof stable existence of three main polymorphic conformations of graphyne layers. Te graphyne layers were designed byincorporating a carbyne chain into the initial L3–12-graphene layer by following rules: for the γ-L3–12-graphyne layer, one bondof each three-coordinated atom was substituted by a carbyne chain, for the β-L3–12-graphyne layer, two bonds of those atomswere replaced, and for α-L3–12-graphyne layers three bonds were replaced. Te sublimation energy of the graphyne layers is inthe range from 6.52 to 6.61 eV/atom that is less than the sublimation energy of the original L3–12 graphene layer (6.66 eV/atom)as well as the sublimation energy of hexagonal graphene (7.76 eV/atom). However, the value of the sublimation energy of thegraphyne layers is in the range of experimentally synthesized carbon materials that are stable under normal conditions. All thegraphyne layers studied in this work are semiconductors with the energy gaps widths from 0.18 to 0.91 eV.
机译:在本文中,对在石墨烯L3-12层上建模的石墨烯层的新多态构象的结构和电子性质进行了理论研究。通过用双原子碳炔链取代L3-12石墨烯层中三配位(sp2-杂化)原子之间的碳-碳键来构造石墨烯层。在密度泛函理论的框架下,使用梯度近似进行了几何优化和新型石墨烯体系的电子性能检查。计算表明,可能稳定存在石墨烯层的三个主要多态构象。通过按照以下规则将碳炔链并入初始L3-12石墨烯层来设计石墨烯层:对于γ-L3-12石墨烯层,每个三配位原子的一个键被碳炔链取代,对于β -L3–12-石墨烯层,替换了那些原子的两个键,而对于α-L3–12-石墨烯层,替换了三个键。石墨烯层的升华能量在6.52至6.61 eV /原子的范围内,小于原始L3-12石墨烯层的升华能量(6.66 eV /原子)和六方石墨烯的升华能量(7.76 eV) /原子)。然而,石墨烯层的升华能量的值在正常条件下稳定的实验合成碳材料的范围内。在这项工作中研究的所有石墨烯层都是能隙宽度为0.18至0.91 eV的半导体。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号