首页> 外国专利> STRUCTURE FOR FORMING GRAPHENE LAYER, MANUFACTURING METHOD OF STRUCTURE FOR FORMING GRAPHENE LAYER AND METHOD OF FORMING GRAPHENE LAYER USING STRUCTURE FOR FORMING GRAPHENE LAYER

STRUCTURE FOR FORMING GRAPHENE LAYER, MANUFACTURING METHOD OF STRUCTURE FOR FORMING GRAPHENE LAYER AND METHOD OF FORMING GRAPHENE LAYER USING STRUCTURE FOR FORMING GRAPHENE LAYER

机译:形成石墨烯层的结构,形成石墨烯层的结构的制造方法以及使用形成石墨烯层的结构形成石墨烯层的方法

摘要

According to the present invention, provided is a structure for forming a graphene layer which includes an HOPG mesa with an exposure surface, a metal layer which is formed on the surface of the HOPG mesa and is opposite to the exposure surface, a side coating which is formed to surround a different surface except the metal layer and the exposure surface of the HOPG mesa, and a support stand which is attached to the surface of the metal layer. Also, according to the present invention, provided are a method for manufacturing the substrate for forming the graphene layer and a method for forming the graphene layer using the structure for forming the graphene layer.
机译:根据本发明,提供了一种用于形成石墨烯层的结构,该石墨烯层包括具有暴露表面的HOPG台面,形成在HOPG台面的表面上且与暴露表面相对的金属层,侧涂层,形成为围绕除了金属层和HOPG台面的暴露表面之外的不同表面,以及附接到金属层的表面的支撑架。此外,根据本发明,提供了一种用于形成用于形成石墨烯层的基板的方法和一种用于使用形成石墨烯层的结构来形成石墨烯层的方法。

著录项

  • 公开/公告号KR20140144854A

    专利类型

  • 公开/公告日2014-12-22

    原文格式PDF

  • 申请/专利权人 DH ENERGY AND ENVIRONMENT CORPORATION;

    申请/专利号KR20130066939

  • 发明设计人 LEE YANG SOO;KIM JEONG HWAN;

    申请日2013-06-12

  • 分类号H01B5/14;C01B31/02;H01B13;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:22

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