Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer

摘要

Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.