On approach of optimization of manufacturing of a heterotransistors with two gates to decrease their dimensions

摘要

In this paper we introduce an approach tomanufacture a field-effect heterotransistor with two gates. Framework the approach we consider a heterostructure with required configuration, doping of required parts of the heterostructure by diffusion and/or ion implantation and optimization of annealing of dopant or radiation defects. The introduced approach of manufacturing of transistor gives us possibility to decrease area of surface and thickness of the transistor. In this paper we also introduce an approach to make prognosis of mass and heat transport with account variation of parameters of these processes in space in time and nonlinearity of these processes.