Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process

摘要

In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be 540°C to 580°C for the initial excess arsenic density of 2×1019/cm3 to 8×1019/cm3.