Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs

摘要

We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperaturegrown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.