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首页> 外文期刊>E-Journal of Surface Science and Nanotechnology >Establishing the Relationship between Substrate Bias Voltage and Formation Process of Single Component Ion-Plasma's Film Based on Tin by Electric-Arc Evaporation
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Establishing the Relationship between Substrate Bias Voltage and Formation Process of Single Component Ion-Plasma's Film Based on Tin by Electric-Arc Evaporation

机译:电弧蒸发建立基于锡的单组分离子等离子体薄膜的衬底偏置电压与成膜过程的关系

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摘要

Influence of substrate bias voltage on temperature conditions, formation stages, structure formation processes and prevailing orientation of titanium nitride films in the course of electric-arc evaporation was investigated.Increase in substrate bias voltage was found to accelerate considerably the formation stages of poly-crystalline TiN films with prevailing crystallographic orientation (111).Degree of prevailing orientation and crystallinity increases with substrate bias voltage.Optimum temperature range of polycrystalline (111)TiN films is 645-725 K.
机译:研究了衬底偏置电压对电弧蒸发过程中温度条件,形成阶段,结构形成过程和氮化钛薄膜主要取向的影响,发现衬底偏置电压的增加大大加速了多晶的形成阶段具有主要晶体学取向(111)的TiN薄膜。主要取向和结晶度随基材偏压的增加而增加。多晶(111)TiN薄膜的最佳温度范围为645-725 K.

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