Effect of Doping Phosphorescent Material and Annealing Treatment on the Performance of Polymer Solar Cells

摘要

A series of polymer solar cells (PSCs) with P3HT:PCBM or P3HT:PCBM:Ir(btpy)3blend films as the active layer were fabricated under the same conditions. Effects of phosphorescent material Ir(btpy)3doping concentration and annealing temperature on the performance of PSCs were investigated. The short-circuit current density (Jsc) and open-circuit voltage (Voc) are increased by adopting P3HT:PCBM:Ir(btpy)3blend films as the active layer when the cells do not undergo annealing treatment. The increasedJscshould be attributed to the increase of photon harvesting induced by doping phosphorescent material Ir(btpy)3and the effective energy transfer from Ir(btpy)3to P3HT. The effective energy transfer from Ir(btpy)3to P3HT was demonstrated by time-resolved photoluminescence (PL) spectra. The increasedVocis due to the photovoltaic effect between Ir(btpy)3and PCBM. The power conversion efficiency (PCE) of PSCs with P3HT:PCBM as the active layer is increased from 0.19% to 1.49% by annealing treatment at 140°C for 10 minutes. The PCE of PSCs with P3HT:PCBM:Ir(btpy)3as the active layer is increased from 0.49% to 0.95% by annealing treatment at lower temperature at 100°C for 10 minutes.