A process for the doping of silicon material for solar cells, correspondingly doped silicon material and solar cell

摘要

To improve the energy efficiency of solar cells, the silicon material with one or more different lanthanides doped, so that this material, in a layer of about 600 nm depth penetrates. As a result, photons with an energy, which is at least twice as large as the band gap of the silicon material of 1,2 ev, by means of the excitation and recombination of the unpaired 4f - of the electrons of the lanthanides in two or more photons with an energy in the region of the band gap of silicon are converted. As a result, additional photons with an advantageous energy in the vicinity of the band gap of silicon for the electrons - hole - formation of available.