Ga-DOPED CRYSTALLINE SILICON, PROCESS FOR PRODUCING THE SAME, Ga-DOPED CRYSTALLINE SILICON PRODUCTION APPARATUS FOR USE IN THE PROCESS, SOLAR CELL INCLUDING SUBSTRATE OF GA-DOPED CRYSTALLINE SILICON AND PROCESS FOR PRODUCING THE SAME

摘要

A technical method for inhibiting the dispersion of value of resistivity (disproportionation) of Ga-doped polycrystalline Si produced by casting process; and a method for enhancing the production yield of polycrystalline silicon solar cell. For inhibiting the disproportionation, the provided process for producing a Ga-doped crystalline silicon comprises the melting step of mixing a raw silicon with a gallium dopant and heating the mixture to given temperature so as to melt the same and the crystal growing step of cooling the molten raw silicon so as to effect growth of crystalline silicon. In the crystal growing step, supplementary raw silicon is added to the molten raw silicon in accordance with the growth of crystal. There are further provided a Ga-doped crystalline silicon produced by the process and a Ga-doped crystalline silicon production apparatus for use in the process. Still further, there are provided a solar cell including a substrate of the Ga-doped crystalline silicon and a process for producing the same.