Substrate Temperature Effects on Structural Optical and Electrical Properties of Vacuum Evaporated Cu2ZnSnS4 Thin Films

摘要

The horizontal Bridgman method has been used to synthesize single crystal and near stoichiometric Cu2ZnSnS4 compound from elemental Cu, Zn, Sn and S materials and Cu2ZnSnS4 thin films were deposited on glass substrates by thermal evaporation method at different substrate temperature in the range of RT to 200°C. X-ray diffraction (XRD) results suggest that CZTS powder crystallized into kesterite structure with a high degree of crystallinity. All thin films are amorphous in structure at lower substrate temperature, while crystalline CZTS films are obtained at higher temperature. Cu2ZnSnS4 crystal exhibit p-type conductivity at the surface and are intrinsic in the volume. By cons, all the CZTS thin films are p-type conductivity with resistivity in the range 100-300 Ω.cm. It is noted that increasing substrate temperature Ts from RT to 200°C has reduced resistivity of CZTS thin films.