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Photocatalytic Activities of Vertically Aligned Manganese- Doped ZnO Nanorods Synthesized on ITO Film by Electrochemical Technique

机译:电化学技术在ITO薄膜上合成垂直取向锰掺杂ZnO纳米棒的光催化活性

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A facile electrochemical approach was used to one step growth of Mn-doped ZnO nanorods on indiumtin oxide conductive glass. FESEM images show an increase in diameter and height of ZnO nanorodsby doping Mn ions in ZnO lattice. XRD results indicate that the Mn dopant lead to a shift in thediffraction peak position toward a lower angle side compared to the undoped ZnO nanorods.Electrochemical impedance spectroscopy results proving that doping Mn ions in ZnO nanorods can leadto higher free-electron carriers that accelerate charge transfer and reduces the resistance. Photocatalyticactivities of the sample were studied by degrading methylene blue under UV–vis light irradiation. Thephotodegradation efficiency of Mn-doped ZnO nanorods achieved for 100 min irradiation times was81% which reveals better findings compared to previous reports. The Mn-doped ZnO nanostructureshave higher rate constant and degradation efficiency as it has higher surface defects, length, andcrystallinity than others.
机译:一种简便的电化学方法用于在氧化铟锡导电玻璃上一步生长Mn掺杂的ZnO纳米棒。 FESEM图像显示,通过在ZnO晶格中掺杂Mn离子,可以增加ZnO纳米棒的直径和高度。 X射线衍射结果表明,与未掺杂的ZnO纳米棒相比,Mn掺杂剂导致衍射峰的位置向较低的角度移动。电化学阻抗谱表明,在ZnO纳米棒中掺杂Mn离子可以导致更高的自由电子载流子,从而加速电荷转移并降低阻力。通过在紫外可见光照射下降解亚甲基蓝来研究样品的光催化活性。 Mn掺杂的ZnO纳米棒在100分钟的照射时间内达到的光降解效率为81%,与以前的报道相比,发现了更好的发现。 Mn掺杂的ZnO纳米结构具有更高的速率常数和降解效率,因为它具有更高的表面缺陷,长度和结晶度。

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