B掺杂TiO2/ITO薄膜电极的MOCVD制备及其可见光催化活性研究

摘要

B-doped titanium dioxide thin films were grown onto Indium tin oxide (ITO) glass under atmospheric pressure by metal-organic chemical vapor deposition (MOCVD) method. The crystal structure, composition, chemical states and photo response of the prepared samples were analyzed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-Vis-DRS spectra. Meanwhile their visible-light-driven (VLD) photoelectrocatalytic activity was evaluated by the results of methyl orange dye (MO) degradation under artificial sun light (xenon lamp) irradiation. The results show that the prepared B-doped TiO2/ITO film electrodes have excellent photoelectrocatalytic activity under visible-light irradiation. The photoelectroactivity of B-doped TiO2/ITO films increase significantly with the increase of boron doping amount within a certain range (B∶Ti<15 %). The degradation ratio of MO solution reaches 82.7 % after 120 min treatment. The durability and stability of the film electrodes were testified by repetitive degradation experiments.%　　采用金属有机物化学气相沉积方法，制备出了具有可见光催化活性的B掺杂TiO2/ITO薄膜电极。利用X射线衍射(XRD)、X射线光电子能谱(XPS)以及紫外-可见漫反射吸收光谱(UV-Vis-DRS)分析等方法对所得材料的晶型、组成、化学态和光响应等特性进行了表征。同时，在模拟可见光照射条件下，通过在光电催化反应体系中降解偶氮染料甲基橙的实验，验证和评价了材料的光电催化性能。结果表明：所制备的B掺杂TiO2/ITO纳米薄膜电极在可见光条件下具有良好的光电催化性能，其催化活性在一定范围内(B∶Ti<15%(原子比))随着B掺杂量上升而提高。光电催化甲基橙的去除率达到82.7%，并且经过连续实验，证实了材料具有良好的稳定性和可重复使用性。